Carbon and hydrogen incorporation in ZnTe layers grown by metalorganic chemical vapor deposition

The metalorganic chemical vapor deposition growth of ZnTe has been performed at atmospheric pressure under helium and hydrogen carrier gases. Epitaxial growth was achieved on GaAs (100) substrates with the combination of diethylzinc and diethyltellurium as precursors. We have studied the incorporation of carbon and hydrogen in as-grown layers of ZnTe by secondary ion mass spectroscopy analysis and out-diffusion experiments with different carrier gases and growth temperatures. The amount of carbon and hydrogen incorporated in the ZnTe layers greatly depends on the nature of the gas considered. Under helium atmosphere, the amount of carbon and hydrogen incorporated are greater than under H₂ with an origin from organometallic precursors.