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ZnMgSe/ZnCdSe多量子阱的光学性质
引用本文:吕有明,申德振,刘益春,范希武,张吉英,李炳辉,支壮志,孔祥贵. ZnMgSe/ZnCdSe多量子阱的光学性质[J]. 固体电子学研究与进展, 2002, 22(4): 425-428
作者姓名:吕有明  申德振  刘益春  范希武  张吉英  李炳辉  支壮志  孔祥贵
作者单位:中国科学院长春光学精密机械与物理研究所激发态物理开放实验室,130022
基金项目:中国科学院创新工程项目,“863”高技术研究项目,国家攀登计划项目,国家自然科学重大基金 (No698962 60 ),百人计划项目,国家自然科学基金 (No699770 19)
摘    要:通过光致发光 (PL)和拉曼 (Raman)光谱研究了分子束外延 (MBE)生长的 Zn Mg Se/ Zn Cd Se多量子阱的光学性质。在 80 K到 3 0 0 K温度范围内 ,观测到了 PL光谱中来自量子阱的自由激子发光 ,通过发光强度与温度的变化关系 ,计算了激子束缚能。结果表明在 Zn Mg Se/ Zn Cd Se多量子阱 (MQWs)势垒层中 ,Mg的引进增强了量子阱的限制效应 ,导致激子具有较好的二维特性。在室温下的 Raman光谱中观测到了多级纵光学声子(LO)和横光学声子 (TO)的限制模 ,表明多层结构具有较高的质量

关 键 词:多量子阱  光致发光  拉曼光谱
文章编号:1000-3819(2002)04-425-04
修稿时间:2001-12-25

Optical Properties of ZnMgSe/ZnCdSe Multiple Quantum Wells
LU Youming SHEN Dezhen LIU Yichun FAN Xiwu ZHANG Jiying LI Binghui ZHI Zhuangzhi KONG Xianggui. Optical Properties of ZnMgSe/ZnCdSe Multiple Quantum Wells[J]. Research & Progress of Solid State Electronics, 2002, 22(4): 425-428
Authors:LU Youming SHEN Dezhen LIU Yichun FAN Xiwu ZHANG Jiying LI Binghui ZHI Zhuangzhi KONG Xianggui
Abstract:Optical properties of ZnCdSe/ZnMgSe multiple quantum wells (MQWs) grown by molecular beam epitaxy (MBE) are studied by the photoluminescence (PL) and Raman scattering spectra. In PL spectra, an intense emission band coming from free excition luminescence of the quantum wells can be observed from 80 K to 300 K. The excition binding energy is calculated by the dependence of PL intensity on the temperature which shows the behavior of the two dimension excitons. The result indicates that the enhancement of the confinement effect by the induced Mg in the barrier layers. The Raman scattering classifying into the longitudinal optical photon (LO) and transverse optical photon confined in quantum wells are observed at room temperature (RT), which confirms the formation of a multilayer structure with the higher crystalline quality.
Keywords:quantum well  photoluminescence  Raman spectra
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