| 一种提高阻变存储器擦除可靠性的写电路设计 |
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| 引用本文： | 吴雨欣,李萌,林殷茵.一种提高阻变存储器擦除可靠性的写电路设计[J].固体电子学研究与进展,2011,31(5). |
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| 作者姓名： | 吴雨欣 李萌 林殷茵 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 教育部光电技术及系统重点实验室资助课题(CETD00-09) |
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| 摘 要： | 针对现有阻变存储器中严重影响擦除操作可靠性的"写回"现象,结合测试数据、材料特性及电路原理分析了引起这种现象的主要原因,给出了一种加入"擦除反馈"功能的写电路设计方案。该方案能够对擦除操作进行监控,一旦发现操作完成,立即使用反馈电路关闭写驱动的输出以停止擦除操作,防止"写回"现象。优化后的写电路方案在0.13μm标准CMOS工艺下进行了流片验证。通过测试数据的分析对比,可以看到相比传统的写电路方案,采用文中的电路设计能明显降低"写回失效"的可能,大幅度提高擦除操作的可靠性。
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| 关 键 词： | 阻变存储器 写入与擦除 写驱动电路 比较与反馈 |
A Novel RRAM Write Circuit with Improved Reset Reliability |
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| WU Yuxin,LI Meng,LIN Yinyin.A Novel RRAM Write Circuit with Improved Reset Reliability[J].Research & Progress of Solid State Electronics,2011,31(5). |
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| Authors: | WU Yuxin LI Meng LIN Yinyin |
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| Affiliation: | WU Yuxin LI Meng LIN Yinyin(ASIC & System State Key Lab.,Fudan University,Shanghai,201203,CHN) |
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| Abstract: | Aimed at the "set back" causing low reset reliability in current RRAM design,we demonstrated a novel solution based on the analysis of test data and circuit principles to overcome the issue.The solution introduces a function to detect the reset operation and uses a feedback circuit to close the write driver once the reset is finished,which can prevent the unexpected set back in reset operation.Our solution has also been validated under 0.13 μm CMOS logic process,and it is proved to be effective with the test data support that the reset reliability should improve a lot with feedback circuit. |
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| Keywords: | resistive memory set and reset write driver reedback |
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