| 八胞合成X波段140W AlGaN/GaNHEMT的研究与应用 |
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| 引用本文： | 钟世昌,陈堂胜,张斌,任春江,陈辰,高涛. 八胞合成X波段140W AlGaN/GaNHEMT的研究与应用[J]. 固体电子学研究与进展, 2011, 31(5): 442-444,493 |
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| 作者姓名： | 钟世昌 陈堂胜 张斌 任春江 陈辰 高涛 |
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| 作者单位： | 1. 南京电子器件研究所,南京,210016
2. 南京电子器件研究所,南京,210016;微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 主要研究第三代半导体AlGaN/GaN功率管内匹配问题.采用8个2.5 mm GaN功率芯片设计、合成以及内匹配电路的测试,在漏极电压40 V,脉冲占空比10％,脉宽100μs的条件下进行功率匹配,实现了GaN功率HEMT在X波段8 GHz 140 W功率输出的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50 Ω...
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| 关 键 词： | 氮化镓 功率管 内匹配 |
Research and Application of X-band 140 W AlGaN/GaN Power HEMT with Eight Cells Internal Matching |
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| ZHONG Shichang,CHEN Tangshen,ZHANG Bing,REN Chunjiang,CHEN Chen,GAO Tao. Research and Application of X-band 140 W AlGaN/GaN Power HEMT with Eight Cells Internal Matching[J]. Research & Progress of Solid State Electronics, 2011, 31(5): 442-444,493 |
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| Authors: | ZHONG Shichang CHEN Tangshen ZHANG Bing REN Chunjiang CHEN Chen GAO Tao |
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| Affiliation: | ZHONG Shichang1 CHEN Tangshen1,2 ZHANG Bing1,2REN Chunjiang1,2 CHEN Chen1,2 GAO Tao1,2(1 Nanjing Electronic Devices Institute,Nanjing,210016,CHN)(2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,CHN) |
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| Abstract: | The paper researches the AlGaN/GaN internal matching technology.Using in-house made eight 2.5 mm GaN power HEMT transistors,the internal matching transistor demonstrates an output pluse power of more than 140 W with a power gain of over 6 dB,PAE of 28.66% at 8 GHz,operating at 40 V drain bias voltage with the plused conditions at a duty of 10% with a pulse width of 100 μs.In this case,the HEMT has the output power density as high as 7 W/mm. |
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| Keywords: | GaN HEMT internal matching |
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