Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs |
| |
| Authors: | M Faqir G Verzellesi F Fantini F Danesin F Rampazzo G Meneghesso E Zanoni A Cavallini A Castaldini N Labat A Touboul C Dua |
| |
| Affiliation: | aDepartment of Information Engineering, University of Modena and Reggio Emilia, Modena, Italy;bDepartment of Information Engineering, University of Padova, Padova, Italy;cDepartment of Physics, University of Bologna, Bologna, Italy;dIXL Laboratoire, Universitè Bordeaux 1, Talence Cedex, France;eAlcatel-THALES III-V Lab/Tiger, Marcoussis, France |
| |
| Abstract: | Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
