A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology |
| |
| Authors: | Campbell C Lee C Williams V Ming-Yih Kao Hua-Quen Tserng Saunier P Balisteri T |
| |
| Affiliation: | TriQuint Semicond., Richardson, TX, USA; |
| |
| Abstract: | The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25- mum GaN on SiC device technology integrated into the three metal interconnect (3 MI) process flow. Experimental results for the MMIC at 30 V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power-added efficiency over a 1.5 GHz to 17 GHz bandwidth. |
| |
| Keywords: | |
|
|
