Photoelectrochemical properties of AgInS2 thin films prepared using electrodeposition |
| |
Authors: | Chih-Hao WangKong-Wei Cheng Chung-Jen Tseng |
| |
Affiliation: | a Department of Mechanical Engineering, National Central University, No. 300, Jhongda Road, Chungli 32001, Taiwan b Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 333, Taiwan |
| |
Abstract: | Ternary silver-indium-sulfide samples were deposited on fluorine-doped tin oxide (FTO) coated glass substrates using a one-step electrodeposition method. A new procedure for the deposition of AgInS2 samples is reported. The effect of the Ag]/In] molar ratio in solution bath on the structural, morphological, and photoelectrochemical properties of samples was examined. X-ray diffraction patterns of samples show that the films are the AgInS2 phase. The thickness, direct band gap, and indirect band gap of the films were in the ranges 209-1021 nm, 1.82-1.85 eV, and 1.44-1.51 eV, respectively. The carrier densities and flat-band potentials of films obtained from Mott-Schottky and open-circuit potential measurements were in the ranges of 4.2×1019-9.5×1019 cm−3 and −0.736 to −0.946 V vs. the normal hydrogen electrode (NHE), respectively. It was found that the samples with molar ratio Ag]/In]=0.8 in solution bath had a maximum photocurrent density of 9.28 mA/cm2 with an applied bias of +1.0 V vs. an Ag/AgCl electrode in contact with electrolyte containing 0.25 M K2SO3 and 0.35 M Na2S. The results show that high-quality AgInS2 films can be deposited on FTO-coated glass substrates for photoelectrochemical (PEC) applications. |
| |
Keywords: | Thin film Photocurrent Electrodeposition AgInS2 |
本文献已被 ScienceDirect 等数据库收录! |
|