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| Electron Mobility of Doped Strained Si1-x Gex Alloys Grown on Si(100) Substrate^①② | |
| 引用本文： | LI Baojun,LI Guozheng,LIU Enke. Electron Mobility of Doped Strained Si1-x Gex Alloys Grown on Si(100) Substrate^①②[J]. 半导体光子学与技术, 1997, 3(3): 212-217 |
| 作者姓名： | LI Baojun LI Guozheng LIU Enke |
| 作者单位： | LI Baojun:Department of Microelectronics Engineering, Xi'an Jiaotong University, Xi'an 710049, CHN LI Guozheng:Department of Microelectronics Engineering, Xi'an Jiaotong University, Xi'an 710049, CHN LIU Enke:Department of Microelectronics Engineering, Xi'an Jiaotong University, Xi'an 710049, CHN |
| 基金项目： | Supported by the National Natural Science Key Foundation(69636040), China |
| 摘 要： | The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping rage of 10^17 cm^-3 to 10^20 cm^-3with Ge contents of 0.0≤x≤1.0.The results show a decrease in the mobility with increasing of Ge content and doping concentration.The electron mobility in-plane is foud to be smaller than the perpendicular component. |
| 关 键 词： | 电子迁移 半导体 硅 应变合金 |
| 收稿时间： | 1997-04-29 |
Electron Mobility of Doped Strained Si1-xGex Alloys Grow n on Si(100) Substrate |
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| Abstract: | The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping rage of 10^17 cm^-3 to 10^20 cm^-3with Ge contents of 0.0≤x≤1.0.The results show a decrease in the mobility with increasing of Ge content and doping concentration.The electron mobility in-plane is foud to be smaller than the perpendicular component. |
| Keywords: | Doping Profiles Electron Mobility Semiconductor Materials Silicon Strained Alloys |
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