The performance and reliability of 0.4 micron MOSFET's with gateoxynitrides grown by rapid thermal processing using mixtures of N2O and O2 |
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| Authors: | Okada Y. Tobin P.J. Rushbrook P. DeHart W.L. |
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| Affiliation: | Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX; |
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| Abstract: | We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N 2O and O2 by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET's fabricated by a 0.4 μm twin-well process were examined. No degradation of the current drive of n- and p-MOSFET's in the linear and the saturation region was observed due to oxynitridation. The reliability of gate dielectrics represented by charge-to-breakdown for substrate injection and hot carrier immunity of n-MOSFET's is improved with increasing interfacial nitrogen concentration |
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