Optoelectronic matrix switch using heterojunction switching photodiodes |
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| Authors: | Hara E.H. Machida S. Ikeda M. Kanbe H. Kimura T. |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3×3 matrix switch. Isolation and cross-talk losses were better than 63 dB over a frequency range of 10 Hz to 400 MHz and 400 Mbit/s digital signals were switched with switching times shorter than 30 ns. |
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