The electro-optical properties of amorphous indium tin oxide films prepared at room temperature by pulsed laser deposition

The electrical and optical properties of pulsed laser deposited amorphous indium tin oxide films at room temperature are discussed. The films were grown from indium oxide (In₂O₃) targets of different tin (Sn) doping content (0, 5 and 10 wt%) at different oxygen pressures (P_O2) ranging from 1×10⁻³ to 5×10⁻² Torr. The electrical and optical properties of the films were examined by Hall measurements and optical spectrophotometry. It was found that high conductivity amorphous films could be prepared at room temperature irrespective of the Sn doping content. The properties of these films deposited from 0, 5, 10 wt% Sn-doped In₂O₃ targets show a similar response to changes in P_O2. The maximal conductivity of (4.0, 2.1 and 1.8)×10³ S/cm and optical transmittance (visible) higher than 90% were obtained at P_O2 region of (1–1.5)×10⁻² Torr. An undoped In₂O₃ film produced the highest conductivity of 4×10³ S/cm in these studies.