Microstructure and properties of an electroconductive SiC-based composite |
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| Authors: | Diletta Sciti Andrea Balbo Cesare Melandri Giuseppe Pezzotti |
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| Affiliation: | (1) CNR-ISTEC, Institute of Science and Technology for Ceramics, Via Granarolo 64, 48018 Faenza, Italy;(2) Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585 Kyoto, Japan;(3) Research Institute for Nanoscience (RIN), Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585 Kyoto, Japan |
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| Abstract: | In this work, an SiC-based electroconductive composite is obtained through simultaneous addition of MoSi2 and ZrB2 particles. The composite material is fully densified by hot pressing at 1860 °C and the microstructure is investigated by SEM-EDS analysis. Microstructural features and mechanical properties are compared to those of a monolithic hot-pressed SiC material. The MoSi2 and ZrB2 particles, besides increasing the electrical conductivity of the silicon carbide matrix, also act as reinforcement for the material. Room-temperature strength reaches the value of 850 MPa and the fracture toughness is 4.2 MPa m0.5. The composite electrical resistivity is of the order of 10−3 Ω cm. |
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