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Single-mode AlGaAs-GaAs lasers using lateral confinement bynative-oxide layers |
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| Authors: | Heerlein J. Grabherr M. Jager R. Unger P. |
| Affiliation: | Dept. of Optoelectron., Ulm Univ.; |
| Abstract: | We report on results of wet oxidized narrow-stripe QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 4-10 μm achieved output powers of up to 240 mW in continuous-wave (CW) operation at room temperature |
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