Influence of Surface Treatment and Annealing Temperature
on the Formation of Low-Resistance Au/Ni Ohmic Contacts
to <Emphasis Type="Italic">p</Emphasis>-GaN |
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Authors: | I Chary A Chandolu B Borisov V Kuryatkov S Nikishin M Holtz |
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Affiliation: | (1) Nano Tech Center, Texas Tech University, Lubbock, TX 79409, USA |
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Abstract: | We have studied the influence of surface treatment and annealing temperature on the specific contact resistance of Au/Ni ohmic
contacts to p-GaN with hole concentrations in the range of 1016 cm−3 to 1018 cm−3. The sample with a hole concentration of 1 × 1018 cm−3, treated with the surface treatment HCl:H2O = 3:1 solution and annealed at 500°C in a 90% N2 and 10% O2 atmosphere, yielded the lowest specific contact resistance of ~4 × 10−5 Ω cm2 and ~2 × 10−7 Ω cm2 at room temperature and at 150°C, respectively. To investigate the roles of interdiffusion between layer interfaces and the
formation of NiO and nickel gallides, we examined the metallization stacks before and after annealing using high-resolution
x-ray diffraction. We conclude that the nickel-gallide formation and the deterioration of the NiO layer are together responsible
for the large deviation in contact resistances observed for samples annealed at various temperatures. |
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Keywords: | p-GaN ohmic contact specific contact resistance interface HRXRD |
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