氧离子注入对金刚石薄膜微结构和力学性能的影响

采用扫描电镜（SEM）、Raman光谱和纳米压痕法研究了氧离子注入对低硼掺杂金刚石薄膜微结构和力学性能的影响。结果表明，薄膜中注入较高剂量的氧离子并退火后，晶粒尺寸减小。氧离子注入导致薄膜中金刚石含量减小；1000℃退火后，薄膜中金刚石含量增加为99．8％。氧离子注入后，薄膜中的内应力由拉应力转变为压应力；退火后，薄膜内应力再转变为柱应力。氧离子注入后的金刚石薄膜的硬度较注入前的薄膜硬度有所降低，但其硬度仍然大于40GPa并具有良好的弹性恢复率。薄膜的力学性能与薄膜中的金刚石含量、晶粒尺寸和应力值有直接关系。

The roles of oxygen ion implantation on the microstructure and mechanical properties of diamond films

The influences of the oxygen ion implantation on the structural and mechamcal properties of B-doped diamond films have been investigated by using scanning electron microscopy （SEM）, Raman spectroscopy, and nano-indentation measurements. It is found that the oxygen ion implantation with higher dose and annealing prefers to decrease the grain size of diamond films. Raman measurements show that the amount of diamond decreases due to the ion implantation and it increases to 99.8% after 1000℃ annealing. The stress transits from tension to compression due to the ion implantation, and it becomes tensile again after annealing. The oxygen ion implanted diamond films exhibit super-hardness （〉40 GPa） and good elastic recovery （〉80%） even though these values are smaller than that of un-implanted B-doped diamond film. These mechanical properties have a direct relation to the amount of diamond, grain size and stress values in B-doped diamond films under different ion implantation conditions.