|
|||||
|
|
GaAs/AlGaAs dynamic random access memory cell |
|
| Authors: | Chen C.L. Goodhue W.D. Mahoney L.J. |
| Affiliation: | Lincoln Lab., MIT, Lexington, MA, USA; |
| Abstract: | A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.< |
| Keywords: | |