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透明导电AZO/Cu双层薄膜制备及其性能
引用本文:叶春丽,王钰萍,吕建国.透明导电AZO/Cu双层薄膜制备及其性能[J].材料科学与工程学报,2011,29(5):757-760,765.
作者姓名:叶春丽  王钰萍  吕建国
作者单位:浙江大学材料科学与工程学系,浙江杭州,310027
基金项目:高等学校博士学科点专项科研基金资助项目(200803351004);教育部留学回国人员科研启动基金资助项目(2009-1001)
摘    要:采用直流磁控溅射方法在玻璃衬底上室温生长了AZO/Cu双层薄膜,Cu层厚度控制在9nm,研究了AZO层厚度对薄膜电学和光学性能的影响。当AZO层厚度为20~80nm时,AZO/Cu双层薄膜具有良好的综合光电性能,方块电阻为12~14Ω/sq,可见光平均透过率为70~75%,品质因子为2×10-3~5×10-3Ω-1。AZO/Cu双层薄膜可以观察到Cu(111)和ZnO(002)的XRD衍射峰。通过退火研究表明,AZO/Cu双层薄膜的光电性能可在400℃下保持稳定,具有良好的热稳定性。本研究制备的透明导电AZO/Cu双层薄膜具有室温制程、综合光电性能良好、结晶性能较好、稳定性高的优点,可以广泛应用于光电器件透明电极及镀膜玻璃等领域。

关 键 词:AZO  双层薄膜  光电性能  室温生长

Fabrication and Properties of Transparent Conductive AZO/Cu Bilayer Films
Affiliation:YE Chun-li,WANG Yu-ping,LU Jian-guo(Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China)
Abstract:AZO/Cu bilayer films were prepared on glass substrates by DC magnetron sputtering at room temperature.The influence of AZO layer thickness on the electrical and optical properties of AZO/Cu bilayer films with the Cu layer thickness of 9 nm was studied.At the optimized AZO layer thickness of 20~80nm,the AZO/Cu bilayer films have superior photoelectric properties,such as sheet resistance of 12~14Ω/sq,average visible transmittance of 70~75%,and figure of merit of 2×10-3~5×10-3Ω-1.The Cu(111) and ZnO(002) diffraction peaks could be detected in the X-ray diffraction(XRD) patterns.The optical and electrical properties of AZO/Cu bilayer films have good stability even at 400℃.The combination of room-temperature growth process,superior transparent-conductive properties,acceptable crystalline quality,and high thermal stability enable the AZO/Cu bi-layer films to be widely used in various fields such as transparent electrodes of optoelectronic devices and coated glasses.
Keywords:AZO  bilayer films  photoelectric properties  room-temperature growth
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