硅基PZT压电功能结构研究

PZT压电薄（厚）膜是制备MEMS传感元件和执行元件重要的功能材料，对近年PZT薄（厚）膜在MEMS领域的研究现状进行了分析，提出了一种新型的双杯PZT/Si膜片式功能结构；采用有限元方法对双杯PZT/Si膜片进行了结构优化，得到PZT和上、下硅杯的结构优化值为DPZT: D1:D2 =0.75:1.1:1；一阶模态谐振频率为13.2KHz；以氧化、双面光刻、各向异性刻蚀，以及PZT厚膜丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片，该膜片具有压电驱动功能。双杯PZT/Si膜片式功能结构的MEMS技术兼容性好，对芯片内其它元件或电路的影响小，适合作为MEMS片内执行元件的驱动机构。

Research on the PZT structure piezoelectric function on the silicon substrate

PZT piezoelectric thin (thick) films are the main function materials for the fabrication of MEMS microsensors and microactuators. This paper analyses the research status quo of PZT piezoelectric thin (thick) films in the field of MEMS, then presents a new type bi-cup PZT/Si film function structure. This structure are optimized and designed with ANSYS finite element analysis software. The optimized structure parameters value of the PZT and up-/sub-silicon-cup are DPZT: D1:D2 =0.75:1.1:1；the resonant frequencies of the First-Order modality is 13.2KHz. PZT piezoelectric thick film driven structure with bi-cup on the silicon substrate are fabricated with the oxidation, lithography, anisotropism etching and screen printing processing, and have the piezoelectric driving function. This PZT piezoelectric thick film driven structure with bi-cup on the silicone substrate have the better compatibility with MEMS technique, and it is suitable to be MEMS micro-actuators driven component.