Characterization of In
x
Ga1−x
As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions |
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Authors: | V I Zubkov |
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Affiliation: | (1) St. Petersburg State Electrotechnical University (LETI), St. Petersburg, 197376, Russia |
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Abstract: | The method of C-V profiling combined with self-consistent solution of Schrödinger’s and Poisson’s equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In x Ga1?x As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures. |
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Keywords: | |
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