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Piezoelectric and deformation potential effects of strain-dependent luminescence in semiconductor quantum well structures
Authors:Aihua Zhang  Mingzeng Peng  Morten Willatzen  Junyi Zhai  Zhong Lin Wang
Affiliation:1. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences;National Center for Nanoscience and Technology (NCNST), Beijing 100083, China;2. Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark;3. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences;National Center for Nanoscience and Technology (NCNST), Beijing 100083, China;School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
Abstract:The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain, in the framework of the 6 × 6 k·p Hamiltonian for the valence states, to directly assess the interplay between the spin-orbit coupling and the strain-induced deformation potential for the interband momentum-matrix element. We numerically addressed problems of both the infinite and IQWs with piezoelectric fields to elucidate the effects of the piezoelectric potential and the deformation potential on the strain-dependent luminescence. The experimentally measured photoluminescence variation as a function of pressure can be qualitatively explained by the theoretical results.
Keywords:piezoelectric potential  deformation potential  luminescence  quantum well
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