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Organic Electronics: High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory (Adv. Funct. Mater. 14/2012)
Authors:Kang‐Jun Baeg  Dongyoon Khim  Juhwan Kim  Byung‐Do Yang  Minji Kang  Soon‐Won Jung  In‐Kyu You  Dong‐Yu Kim  Yong‐Young Noh
Affiliation:1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong‐gu, Daejeon 305‐700, Republic of Korea;2. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan‐gwagiro, Buk‐gu, Gwangju 500‐712, Republic of Korea;3. College of Electrical and Computer Engineering, Department of Electronics Engineering, Chungbuk National University, 410 Seongbong‐ro, Heungduk‐gu, Cheongju, Chungbuk, 361‐76, Republic of Korea;4. Department of Chemical Engineering, Hanbat National University, San 16‐1, Dukmyung‐dong, Yuseong‐gu, Daejeon 305‐719, Republic of Korea
Abstract:
Keywords:organic memory  electrets  NAND flash  organic field‐effect transistors  printed electronics
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