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Highly Air‐Stable Phosphorus‐Doped n‐Type Graphene Field‐Effect Transistors |
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| Authors: | Surajit Some Jangah Kim Keunsik Lee Atul Kulkarni Yeoheung Yoon SaeMi Lee Taesung Kim Hyoyoung Lee |
| Affiliation: | 1. NCRI, Center for Smart Molecular Memory, Department of Chemistry, Samsung‐SKKU Graphene Center, Sungkyunkwan University, Suwon 440‐746, Republic of Korea, Fax: (+82) 31‐299‐5934, Homepage: http://home.skku.edu/～hyoyoung;2. SKKU Advanced Institute of Nano Technology(SAINT), Sungkyunkwan University, Suwon 440‐746, Republic of Korea |
| Abstract: | |
| Keywords: | phosphorus phosphorus doping nucleophilicity Air stable n‐type semiconducting channel field‐effect transistor |