Process integration of Pr-based high-k gate dielectrics |
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| Authors: | AU Mane Ch Wenger G Lupina T Schroeder G Lippert R Sorge P Zaumseil G Weidner J Dabrowski H-J Müssig |
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| Affiliation: | IHP - Microelectronics, Breakthrough, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany |
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| Abstract: | We present the process integration of the Pr-based high-k oxides Pr2O3, PrTixOy and PrxSiyOz for CMOS devices. MOS structures were grown in form of p+ poly-Si/Pr-based dielectric/Si(100) by MBE. RIE with CF4/O2 plasma was used to selectively remove the poly-Si layer. It was found that the Pr-based oxides layers can be dissolved with high selectivity in diluted H2SO4 solutions. Details of the etch kinetics of Pr-based oxides and poly-Si were studied. Electrical characteristics of MOS stacks with integrated PrxSiyOz are presented. |
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| Keywords: | Pr2O3 Pr-silicate Wet etching RIE MBE CMOS |
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