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SOI planar photonic crystal fabrication: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas |
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| Authors: | A.P. Milenin,C. Jamois,T. Geppert,U. Gö sele |
| Affiliation: | a Max Planck Institute of Microstructure Physics, Exp. Dept. 2, Weinberg 2, D06120 Halle, Germany b Department of Physics, University of Paderborn, Warburgerstr. 100, 33098 Paderborn, Germany c Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK |
| Abstract: | Dry plasma etching of sub-micron structures in a SiO2/Si/SiO2 layer system using Cr as a mask was performed in a fluorocarbon plasma. It was determined that the best anisotropy could be achieved in the most electropositive plasma. A gas composition yielding the desired SOI planar photonic crystal structures was optimized from the available process gases, Ar, He, O2, SF6, CF4, c-C4F8, CHF3, using DC bias data sets. Application of the c-C4F8/(noble gas) chemistry allowed fabrication of the desired SOI planar photonic crystal. The average etching rates for the pores and ridge waveguide regions were about 71 and 97 nm/min, respectively, while the average SiO2/Si/SiO2 to Cr etching selectivity for the ridge waveguide region was about 33:1 in case of the c-C4F8/90%Ar plasma with optimized parameters. |
| Keywords: | Plasma etching Photonic crystal Polymer deposition Underetching Bowing Anisotropy Fluorocarbon SiO2 Si SOI Ar He SF6 CF4 C4F8 CHF3 |
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