Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes |
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Authors: | Cao Kewei Fu Binglei Liu Zhe Zhao Lixia Li Jinmin Wang Junxi |
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Affiliation: | 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China;2. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | The origin of anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes was studied. We found that the intensity of the electroluminescence and photoluminescence spectra were both increased in the very beginning period of aging. With the help of a rate-equation model, we concluded that this kind of luminescence efficiency enhancement is a joint effect of the defect reduction in active layers and the changes out of active layers, for example the Mg acceptor annealing. |
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Keywords: | light emitting diodes aging rate-equation model defect reduction |
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