Structure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition

Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1.20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of - and -C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.