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Si3N4掺杂氮化对Sr3SiO5:Eu2+荧光粉发光性能的影响
引用本文:张双双,田文郁,张建新,宋开新,秦会斌.Si3N4掺杂氮化对Sr3SiO5:Eu2+荧光粉发光性能的影响[J].无机材料学报,2017,32(3):252-256.
作者姓名:张双双  田文郁  张建新  宋开新  秦会斌
作者单位:(杭州电子科技大学 新型电子器件与应用研究所, 杭州 310018)
基金项目:浙江省公益性技术应用研究计划资助项目(2016C31110) Zhejiang Public Welfare Technology Application Research Project (2016C31110)
摘    要:采用高温固相法制备Si3N4掺杂氮化Sr2.99SiO5-6xN4x:0.01Eu2+荧光粉。采用XRD、EDS和SEM测试结果表明: N3-进入Sr3SiO5基质晶格中取代部分O2-离子, 形成了单一相Sr2.99SiO5-6xN4x:0.01Eu2+固溶体。PL&PLE荧光光谱测试结果显示, Sr2.99SiO5-6xN4x:0.01Eu2+荧光粉在344nm紫外光的激发下发射出红橙光, 属于Eu2+离子典型的 4f65d1→4f7电子跃迁。随着N浓度的增加, Sr2.99SiO5-6xN4x:0.01Eu2+荧光粉发射光谱和激发光谱的强度明显增强。热稳定性测试结果表明, Si3N4掺杂氮化能够显著提高Sr3SiO5:Eu2+荧光粉的热稳定性。通过Arrhennius模型拟合结果表明横向穿越过程(crossover)引起的Sr3SiO5:Eu2+荧光粉氮化前后的温度猝灭。

关 键 词:Sr3SiO5:Eu2+  荧光粉  Si3N4  
收稿时间:2016-05-19
修稿时间:2016-09-12

Luminescence Properties of Si3N4 Doped Nitride Sr3SiO5: Eu2+ Phosphor
ZHANG Shuang-Shuang,TIAN Wen-Yu,ZHANG Jian-Xin,SONG Kai-Xin,QIN Hui-Bin.Luminescence Properties of Si3N4 Doped Nitride Sr3SiO5: Eu2+ Phosphor[J].Journal of Inorganic Materials,2017,32(3):252-256.
Authors:ZHANG Shuang-Shuang  TIAN Wen-Yu  ZHANG Jian-Xin  SONG Kai-Xin  QIN Hui-Bin
Affiliation:(Institute of Electron Device &Application, Hangzhou Dianzi University,Hangzhou 310018, China)
Abstract:Si3N4 doped Sr2.99SiO5-6xN4x:0.01Eu2+ phosphorssampless were prepared by high temperature solid-state reaction method. Testing results of XRD, EDS and CHNS of the phosphor samples demonstrated that the nitrogen atoms could be incorporated into the host lattice of Sr3SiO5 through partial occupation of the oxygen atoms sites to form Sr2.99SiO5-6xN4x:0.01Eu2+solid solution. Under the excitation of 344 nm ultraviolet, the Sr2.99SiO5-6xN4x: 0.01Eu2+ phosphor samples emit orange lights peaked at 580 nm, which originates from 4f65d1→4f7 transitions of Eu2+ ions. With the increase of N3+-ions concentration, the intensities of emission and excitation spectra of Sr2.99SiO5-6xN4x: 0.01Eu2+ phosphor samples are obviously enhanced. The thermal stability testing results of the phosphor samples show that the incorporation of N3- ions significantly improve the thermal stability better than that of undoped samples. The curves analyzed and fitted by the Arrhennius formula model indicate that the quenching temperature is caused by crossover process.
Keywords:Sr3SiO5  phosphors  Si3N4  
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