石墨烯/纳米减反结构复合透明导电薄膜的研究

石墨烯具有较高的透过率及良好的电导率, 作为透明导电薄膜具有潜在的应用价值。首先在石英基底上引入SiO₂纳米球阵列结构作为光学减反射层, 使石英基底可见光区光学透过率从93.2%增加到99.0%。然后利用常压化学气相沉积方法, 通过基底表面铜颗粒远程催化碳源, 直接在减反层上可控制备具有石墨烯/纳米减反结构的新型复合透明导电薄膜。通过去除SiO₂纳米球阵列结构形成反相复制的石墨烯空心球阵列结构, 且生长时间10 min时, 对应半高宽约40 cm^-1, I_2D/I_G = 2.31, I_D/I_G = 0.77, 证明在SiO₂纳米球阵列减反结构上制备了低缺陷且连续的全包覆少层石墨烯薄膜。引入SiO₂纳米球阵列减反结构后, 其在可见光区光学550 nm波长处的透过率平均提高了5.5%, 方块电阻相对无减反射层基底平均降低了20.09%。本研究方法避免了复杂的转移工序, 减少了对石墨烯的损失与破坏, 同时实现了高透光性及高导电性的功能协同, 在光伏器件、平板显示等领域展示出更大的应用前景。

Research of Graphene/Antireflection Nanostructure Composite Transparent Conducting Films

The graphene film was directly deposited on SiO₂ antireflection(AR) structure by remote catalyzation of Cu nanoparticles using chemical vapor deposition method to fabricate the transparent conducting films with graphene/AR composite structure. Continuous graphene hollow sphere array was obtained after removing SiO₂ AR structure, and the peak intensity ratios of I_2D/I_G and I_D/I_G and the full-width at half-height maximum (FWHM) of the 2D peak in the Raman spectrum of the graphene grew in 10 min were 2.31, 0.77 and about 40 cm^-1, respectively, which demonstrated that the continuous and low-defect few layer graphene was grown on the surface of SiO₂ AR structure. By introducing the SiO₂ AR structure, transmittance of the film increases by 5.5% at 550 nm and the sheet resistance decreases by 20.09% on the average. Data from this study suggest that this film can avoid complex transfer process, decrease damage, and on the meantime realize high transparency and high conductivity performance , showing obvious applicable prospects in the field of photovoltaic devices, flat panel display and so on.