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辛基酚的碳化硅@膨胀石墨修饰电极法检测
引用本文:严 鹏1,王庆虎2,余 俊1,张媛媛1,杨年俊1,李亚伟2,万其进1. 辛基酚的碳化硅@膨胀石墨修饰电极法检测[J]. 武汉工程大学学报, 2017, 39(2): 113-119
作者姓名:严 鹏1  王庆虎2  余 俊1  张媛媛1  杨年俊1  李亚伟2  万其进1
作者单位:1. 武汉工程大学化学与环境工程学院,湖北 武汉 430205;2. 武汉科技大学耐火材料与高温陶瓷国家重点实验室培育基地,湖北 武汉 430081
摘    要:采用气相沉积法在膨胀石墨(EG)层片间生长碳化硅(SiC)晶须,制备出复合材料碳化硅@膨胀石墨(SiC@EG),并通过改变气相沉积的温度(分别为1 200 ℃、1 300 ℃、1 400 ℃)制备出不同形貌的SiC@EG. 所得材料用扫描电镜和循环伏安法及交流阻抗技术进行表征,结果表明1 300 ℃下制得的SiC@EG具有较好的电化学性能,将其作为新型修饰电极材料应用于对酚类环境激素的检测,研究了辛基酚在SiC@EG修饰电极上的电化学行为. 通过考察辛基酚在SiC@EG修饰电极上氧化行为的影响因素,对实验条件进行了优化. 在最优条件下,辛基酚的氧化峰电流和浓度在0.1 μmol / L~10 μmol/L范围内呈现良好的线性关系,检测限达35 nmol/L.

关 键 词:碳化硅晶须  膨胀石墨  化学修饰电极  辛基酚

Detection of Octylphenolusing with Silicon Carbide @ Expanded Graphite Modified Electrodes
YAN Peng1,WANG Qinghu2,YU Jun1,ZHANG Yuanyuan1,YANG Nianjun1,LI Yawei2,WAN Qijin1. Detection of Octylphenolusing with Silicon Carbide @ Expanded Graphite Modified Electrodes[J]. Journal of Wuhan Institute of Chemical Technology, 2017, 39(2): 113-119
Authors:YAN Peng1  WANG Qinghu2  YU Jun1  ZHANG Yuanyuan1  YANG Nianjun1  LI Yawei2  WAN Qijin1
Affiliation:1. School of Chemistry and Environmental Engineering, Wuhan Institute of Technology, Wuhan 430205, China2. The Key State Laboratory Breeding Base of Refractories and Ceramics,Wuhan University of Science and Technology,Wuhan 430081,China
Abstract:The composite materials of silicon carbide @ expanded graphite(SiC@EG) were prepared through the grown of Silicon carbide between the expanded graphite layers by vapor deposition. Different morphologies of SiC @ EG were developed by changing the temperature of vapor deposition from 1 200 ℃, 1 300 ℃ to 1 400 ℃, respectively, and they were characterized by scanning electron microscopy, cyclic voltammetry and electrochemical impedance spectroscopy. The SiC @ EG prepared at 1 300 ℃ shows the best electrochemical property, which was used a novel modified electrode material for the detection of phenolic environmental hormones, and the electrochemical behavior of octylphenol on SiC @ EG modified electrode was studied. The experimental conditions were optimized by investigating the effect of octylphenol oxidation on SiC @ EG modified electrode. Under the optimal conditions, the oxidation peak current and the concentration of octylphenol show a favorable linearity over the range of 0.1 μmol / L-10 μmol / L with the detection limit of 35 nmol / L.
Keywords:silicon carbide whisker  expanded graphite  chemical modified electrodes  octylphenol
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