Comparison of different high-linear LNA structures for PCSapplications using SiGe HBT and low bias voltage |
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| Authors: | Iturbide-Sanchez F Jardon-Aguilar H Tirado-Mendez JA |
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| Affiliation: | Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA; |
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| Abstract: | Different high-linearity low noise amplifier (LNA) structures have been designed, simulated and compared, providing good performance results concerning noise figure, bandwidth, power gain, intermodulation and gain compression, when a low-level voltage supply is used. The structures were designed to be used in personal communication systems (PCSs), operating at 1900 MHz using a SiGe heterojunction bipolar transistor (HBT) and 2.4 V bias polarisation |
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