Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure |
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| Authors: | Junyoung Kwon June-Chul Shin Huije Ryu Jae Yoon Lee Dongjea Seo Kenji Watanabe Takashi Taniguchi Young Duck Kim James Hone Chul-Ho Lee Gwan-Hyoung Lee |
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| Affiliation: | 1. Department of Materials Science and Engineering, Yonsei University, Seoul, 03722 Korea;2. Department of Materials Science and Engineering, Seoul National University, Seoul, 08826 Korea;3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841 Korea;4. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota, 55455 USA;5. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan;6. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan;7. Department of Physics, Kyung Hee University, Seoul, 02447 Korea;8. Department of Mechanical Engineering, Columbia University, New York, NY, 10027 USA |
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| Abstract: | 2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron–hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe2 channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of ≈6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration. |
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| Keywords: | 2D materials electroluminescence light-emitting transistors van der Waals heterostructures WSe2 |
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