Polarized Light-Emitting Diodes Based on Anisotropic Excitons in Few-Layer ReS2 |
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Authors: | Junyong Wang Yong Justin Zhou Du Xiang Shiuan Jun Ng Kenji Watanabe Takashi Taniguchi Goki Eda |
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Affiliation: | 1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551 Singapore;2. Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore, 117543 Singapore;3. National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044 Japan |
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Abstract: | An on-chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in-plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light-emitting diode based on anisotropic excitons in few-layer ReS2, a 2D semiconductor with excitonic transition energy of 1.5–1.6 eV, is reported. The light-emitting device is based on minority carrier (hole) injection into n-type ReS2 through a hexagonal boron nitride (hBN) tunnel barrier in a metal–insulator–semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near-infrared wavelength regime from few-layer ReS2. The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS2. |
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Keywords: | 2D semiconductors, anisotropic excitons light-emitting diodes linear polarization rhenium disulfide (ReS2) |
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