| Pt／Si快速热退火固相反应制备超薄PtSi薄膜 |
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| 引用本文： | 亓文杰,李炳宗,顾志光,黄维宁,董健民,冯志华,刘毓成.Pt／Si快速热退火固相反应制备超薄PtSi薄膜[J].固体电子学研究与进展,1995(1). |
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| 作者姓名： | 亓文杰 李炳宗 顾志光 黄维宁 董健民 冯志华 刘毓成 |
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| 作者单位： | 复旦大学电子工程系，中科院上海技术物理研究所 |
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| 摘 要： | 对Ｐｔ／Ｓｉ快速热退火固相反应形成超薄ＰｔＳｉ薄膜进行研究。溅射Ｐｔ薄膜的厚度在５～２０ｎｍ之间，用ＡＥＳ，ＸＲＤ，ＲＢＳ，ＳＥＭ等分析测试手段对固相反应Ｐｔｓｉ薄膜的结构特性进行观测，并对ＰｔＳｉ／ｎ－Ｓｉ肖特基结电学性能进行了测试。实验结果表明，５５０～６００℃快速返火有利于Ｐｔ／Ｓｉ反应形成性能优良的ＰｔＳｉ／Ｓｉ肖特基势垒接触。
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| 关 键 词： | 快速退火，固相反应，PtSi薄膜 |
PtSi Ultra Thin Film Formation by Solid State Reaction During Rapid Thermal Annealing |
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| Qi Wenjie, Li Bingzong, Gu Zhiguang, Huang Weining.PtSi Ultra Thin Film Formation by Solid State Reaction During Rapid Thermal Annealing[J].Research & Progress of Solid State Electronics,1995(1). |
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| Authors: | Qi Wenjie Li Bingzong Gu Zhiguang Huang Weining |
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| Abstract: | The PtSi ultra thin film formation by solid state reaction duringrapid thermal annealing has been studied. The sputtered Pt film thickness was inthe range of 5-20 urn, the formed film was characterized by AES, XRD, RBS andSEM. The results indicate that the PtSi film formation depends on the rapid thermal annealing process and a 550-600℃rapid thermal annealing is beneficial for theformation of ultra thin PtSi on n-St with good Schottky barrier contact characteristics. |
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| Keywords: | Rapid Thermal Annealing Solid State Reaction PtSi Film |
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