Surface states on the n-InN-electrolyte interface

Dependences of differential capacitance of the electrolyte-n-InN (0001) contact on the bias voltage are studied. Their analysis of the basis of a model similar to a model of the MIS structure shows that the energy spectrum of surface states of InN above the conduction band bottom can be represented by two, relatively narrow, bands of deep levels described by the Gaussian distribution. Parameters of these bands are as follows: the average energy counted from the conduction band bottom, ΔE ₁ ≈ 0.15 eV and ΔE ₂ ≈ 0.9 eV; and the mean-square deviation, ΔE ₁ ≈ 0.15–0.25 eV and ΔE ₂ ≈ 0.05–0.1 eV. The total density of states in the bands are (1–2.5) × 10¹² and (0.2–4) × 10¹² cm^–2.