Morphological characterization of selectively overgrown GaN via lateral epitaxy |
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Authors: | Y G Wang Z Zhang V P Dravid P Kung M Razeghi |
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Affiliation: | (1) Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, B.O. Box 2724, Beijing, 100080, People's Republic of China;(2) Department of Materials Science and Engineering, Northwestern University, 2225 N. Campus Drive, Evanston, IL 60201, USA |
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Abstract: | Morphology as well as the dislocation networks in epitaxial GaN thin film, prepared via selectively lateral overgrowth has been characterized using TEM combined with focused ion beam (FIB) tool. The results showed that orientations of the sidewalls dependent on the orientations of mask strips. The sidewalls coincide with the
planes that form V type voids when the mask strips aligning along
directions and correspond to the
planes that result in rectangular voids if the strips arranging along the
directions. The dislocations were observed along the plan view direction. The dislocations in the lateral overgrown region mainly developed along the direction perpendicular to the strips. The genetic aspect of such morphologies of GaN films may have very close relation with the change of growing fronts of the epitaxial layer. |
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