Annealing effects on irradiated nn silicon detectors

The performance of ATLAS forward region full-sized n⁺n prototype silicon micro-strip detectors has been studied after irradiation with 2×10¹⁴ protons/cm² and 52 days annealing at 20°C. The signal-to-noise ratio measured at −10°C with LHC speed read-out was found to be degraded primarily due to increased noise. The reduction in the reverse current and the changes in the voltage needed for maximum charge collection have both been studied as a function of annealing time. Above the depletion voltage, no effect on the charge collection efficiency has been observed during this annealing period.