首页 | 本学科首页   官方微博 | 高级检索  
     

S波段注入锁频磁控管能量输出器研究
引用本文:王韦龙, 张兆传, 高冬平, 岳松, 冯彤. S波段注入锁频磁控管能量输出器研究[J]. 真空科学与技术学报, 2018, 38(1): 38-42. DOI: 10.13922/j.cnki.cjovst.2018.01.08
作者姓名:王韦龙  张兆传  高冬平  岳松  冯彤
作者单位:1.1. 中国科学院电子学研究所高功率微波源与技术重点实验室 北京 100190
基金项目:国家973计划项目 (2013CB328901); 国家自然科学基金项目 (11305177)
摘    要:针对现有大功率连续波注入锁频磁控管的输出结构插入损耗大, 功率容量低的局限, 本文提出了一种S波段大功率锤状能量输出器, 并给出了其设计原理。利用CST微波工作室对该结构进行仿真验证, 并将其与传统柱形输出结构进行了对比分析。在2.4~2.5 GHz范围内, 新结构的插入损耗大于-0.002 d B, 远优于传统柱形结构。CST仿真显示, 球半径与陶瓷窗厚度对其传输性能影响较大。将能量输出器与磁控管连接进行仿真, 磁控管正常起振, 输出频谱较好。最后, 对窗结构做了热分析与应力分析, 在输入功率为30 k W时, 最大温升27℃, 最大应力156.759 MPa, 最大形变为0.010 mm。该能量输出器具有良好的传输特性与机械性能, 可以满足工程需要。

关 键 词:S波段  大功率  磁控管  输出结构  插入损耗
收稿时间:2017-03-14

Novel Type of Energy Output Structure for S-Band Injection Frequency-Locked Magnetron
Wang Weilong, Zhang Zhaochuan, Gao Dongping, Yue Song, Feng Tong. Novel Type of Energy Output Structure for S-Band Injection Frequency-Locked Magnetron[J]. CHINESE JOURNAL VACUUM SCIENCE AND TECHNOLOGY, 2018, 38(1): 38-42. DOI: 10.13922/j.cnki.cjovst.2018.01.08
Authors:Wang Weilong  Zhang Zhaochuan  Gao Dongping  Yue Song  Feng Tong
Affiliation:1.1. Key Laboratory of High Power Microwave Sources and Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
Abstract:A novel S-band high-power “hammer-shaped”energy output structure was developed to relax the limitations of large insertion loss and low power capacity of the existing high-power continuous wave injection frequency-locked magnetron.The influence of the new output structure on the insertion loss and magnetron performance was simulated with CST microwave studio.The simulated results show that the new output structure considerably outperforms the old one with an insertion loss lower than-0.002 d B in 2.4~2.5 GHz range, and that its ballradius and ceramic window thickness significantly affect the transmission performance.When integrated with the new output structure, the magnetron starts normally and provides a good output spectrum.In addition, the temperature, thermal deformation and stress profile were simulated.At an input power of 30 k W, the highest temperature rise, the strongest stress and the largest deformation were estimated to be 27℃, 156.759 MPa, and 0.010 mm, respectively.
Keywords:S-band  High-power  Magnetron  Output structure  Insertion loss
本文献已被 CNKI 等数据库收录!
点击此处可从《真空科学与技术学报》浏览原始摘要信息
点击此处可从《真空科学与技术学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号