退火处理对N掺杂Al:ZnO薄膜结构及性能的影响

采用射频磁控溅射方法, 常温条件下以N₂作为N掺杂源, 在玻璃基底制备了N掺杂Al:ZnO薄膜。在真空氛围下对样品进行了不同温度的退火处理15 min。通过X射线衍射、霍尔效应测试、紫外-可见光谱和X射线光电子能谱 (XPS) 仪分析了退火对样品结构和光电性能的影响。结果表明真空400℃退火15 min时成功制备出性能优异的p型ZnO薄膜, 其空穴载流子浓度为3.738×10²⁰cm^-3, 电阻率为1.299×10^-2Ω·cm, 样品可见光透射率达到了85%以上。XPS分析说明No受主缺陷的含量大于 (N₂)_o施主缺陷导致薄膜实现了p型转变。

Effect of Annealing on Microstructures and Properties of N-Doped Al: ZnO Thin Films

The N-doped Al: ZnO (AZO) thin films were deposited by RF magnetron sputtering on glass substrate. The influence of the annealing temperature on the microstructures and properties of the N-doped AZO was investigated with X-ray diffraction, ultraviolet infrared spectroscopy, X-ray photoelectron spectroscopy and Hall Effect measurement. The results show that the annealing temperature had a major positive impact. To be specific, annealing at 400℃ for 15 min significantly improved the microstructures, electrical and optical properties of the N-doped AZO coatings. The improved properties include a hole carrier concentration of 3. 738 × 10²⁰ cm^-3, a resistivity of 1. 299 ×10^-2Ω·cm and an optical transmittance of over 85% in the visible light region. The fact that the density of Noacceptor defects is higher than that of the (N2) odonor defects possibly explains the transformation from n-type into ptype of the N-doped AZO coatings.