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Characterization of tin dioxide film for chemical vapors sensor |
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| Authors: | I. Hafaiedh S. Helali K. Cherif A. Abdelghani G. Tournier |
| Affiliation: | aUnité de Recherche de Physique des Semi-conducteurs et Capteurs, IPEST, 2070 La Marsa, Tunisia bEcole des Mines de Saint-Étienne, 158 cours Fauriel, 42023 Saint-Étienne, France |
| Abstract: | Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO2) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 °C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing. |
| Keywords: | AFM FTIR Impedance Spectroscopy Tin dioxide Chemical vapors detection |
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