以Al2O3为过渡层脉冲激光法制备PZT铁电薄膜

为实现PZT铁电薄膜与半导体衬底的直接集成引入Al2O3为过渡层，首先用真空电子束蒸发法在Si(100)，多昌金刚石（111）衬底上生长约20nm厚的Al2O3过渡层，接着在上述衬底上采用脉冲激光淀积（PLD）法淀积PZT薄膜，衬底温度为350-550℃。X光电子能谱（XPS）测试表明，在高真空下，电子束蒸发Al2O3固态源能获得化学配比接近蒸发源的Al2O3薄膜。X射线衍射（XRD）测试说明，不论衬底是硅还是多晶金刚石，当衬底温度为550℃时，PZT在Al2O3过渡层上呈现（222）取向的焦绿石相结构，当衬底是金刚石时，通过如下工艺：（1）较低温度（350℃）淀积；（2）空气氛围650℃快速退火5min，可以在Al2O3过渡层上获得高度（101）取向的钙钛矿结构的铁电相PZT薄膜，最后AFM测试显示，在硅衬底上，PZT薄膜的表面均方根粗糙度为9.78nm；而在多晶金刚石衬底上，PZT薄膜的表面均方根粗糙度为17.2nm。

Growth of high quality PZT thin film with Al2O3 buffer layer by pulsed laser deposition

In order to realize the integration of ferroelectric thin film and semic onductor substrate,Al 2 O 3 was used as buffer layer.First,Al 2 O 3 buffer layer was grown on Si (100),polycrystalline diamond(111)substrates with the thickness about 20nm by vacuum electron -beam evaporation method,then lead zirconate titanate(PZT)thin film was deposited on these substrates by pulsed laser deposition(PLD).XPS results suggest that at high vac uum ambient,stoichiometric Al 2 O 3 thin film can be obtained by the method of electron -beam vaporizing solid -state Al 2 O 3 source.XRD results show that when th e temperature is 550 o C,pyrochlore PZT film with(222)orientation can be obtained on both s ubstrates,and when substrate is diamond,highl y preferential(101)orientation perovskite PZT can be pr epared by the processes:(1)low -temperature(350 o C)deposition;(2)650 o C annealing for 5min in air ambient.AFM images show that the mean roughness of the PZT film is 9.8nm on silicon,and 17.2nm on dia -mond respectively.