| 酸性CuCl2蚀刻液动态蚀刻均匀性与蚀刻速率研究 |
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| 引用本文： | 黄雨新,何为,胡友作,徐缓,覃新,罗旭. 酸性CuCl2蚀刻液动态蚀刻均匀性与蚀刻速率研究[J]. 印制电路信息, 2012, 0(2): 38-41 |
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| 作者姓名： | 黄雨新 何为 胡友作 徐缓 覃新 罗旭 |
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| 作者单位： | 1. 电子科技大学,四川成都,610054
2. 博敏电子股份有限公司,广东梅州,514017 |
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| 摘 要： | 对酸性CuCl2蚀刻液在HCl/H2O2和HCl/NH4Cl两种体系下进行了水平动态蚀刻研究,分别对蚀刻均匀性和蚀刻速率进行了分析,结果表明面铜粗糙度和上下喷淋对蚀刻均匀性有很大影响,HCl/NH4Cl系统相对于HCl/H2O2系统具有更高的蚀刻速率,为工业生产提供相关的数据参考。
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| 关 键 词： | 酸性CuCl2蚀刻液 再生剂 蚀刻均匀性 蚀刻速率 |
Dynamic acid CuCl2 etching uniformity and etching rate study |
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| HUANG Yu-xin HE Wei HU You-zuo XU Huan JIA Xin LUO Xu. Dynamic acid CuCl2 etching uniformity and etching rate study[J]. Printed Circuit Information, 2012, 0(2): 38-41 |
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| Authors: | HUANG Yu-xin HE Wei HU You-zuo XU Huan JIA Xin LUO Xu |
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| Affiliation: | HUANG Yu-xin HE Wei HU You-zuo XU Huan JIA Xin LUO Xu |
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| Abstract: | In this article,a dynamic etching of acid CuCl2 etching bath under the two systems of HCl/H2O2 and HCl/NH4Cl has been studied,the uniformity of etching and the etching rate has been respectively analyzed.The results show that the roughness of surface copper and the upper and the lower spray both influence on etching uniformity greatly,HCl/NH4Cl system has a higher etching rate relative to the HCl/H2O2 system and the relevant reference data has been provided for industrial production. |
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| Keywords: | acid CuCl2 etching bath regeneration etching uniformity etching rate |
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