Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT |
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| Authors: | SL Elizondo F Zhao J Kar J Ma J Smart D Li S Mukherjee Z Shi |
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| Affiliation: | (1) Nanolight, Inc., 710 Asp Ave. Suite 303, Norman, OK 73069, USA;(2) School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, USA |
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| Abstract: | Recent advancements in IV–VI growth techniques have led to a renewed interest in using Pb1−x
Sn
x
Se for mid infrared (mid-IR) detector fabrication. There is now a greater need for an in-depth theoretical understanding of
the potential competitiveness of these material systems with Hg1−x
Cd
x
Te (MCT) especially in regards to material defects and device performance. Herein, we calculate the shielding effects of the
dielectric constant by considering the scattering of electrons due to ionized impurities and small charged dislocations. The
higher dielectric constant in IV–VI materials, nearly ten times greater than that of MCT, is shown to more effectively screen
out the influence of impurities. |
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| Keywords: | Mid-IR detector IV– VI dielectric screening |
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