Turn-on process in 4H-SiC thyristors |
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| Authors: | Levinshtein ME Palmour JW Rumyanetsev SL Singh R |
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| Affiliation: | A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg; |
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| Abstract: | Detailed turn-on measurements of 4H-Silicon Carbide (SiC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8×103 A/cm2) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn on measurements show a residual voltage of only 50 V when a current density of 105 A/cm2 (35 A) was achieved in 20 ns |
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