The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe |
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Authors: | Y Nemirovsky N Amir D Goren G Asa N Mainzer E Weiss |
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Affiliation: | (1) Department of Electrical Engineering, Kidron Microelectronics Research Center, 32000 Technion, Haifa, Israel;(2) Dept. 99, D Semi-conductor Devices, P.O. Box 2250, 31021 Haifa, Israel |
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Abstract: | The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe is reported and the resulting interfaces
are investigated. Metalinsulator-semiconductor test structures are processed and their electrical properties are measured
by capacitance-voltage and current-voltage characteristics. The MOCVD CdTe which was developed in this study, exhibits excellent
dielectric, insulating, and mechano-chemical properties as well as interface properties, as exhibited by MIS devices where
the MOCVD CdTe is the single insulator. Interfaces characterized by slight accumulation and a small or negligible hysteresis,
are demonstrated. The passivation properties of CdTe/ HgCdTe heterostructures are predicted by modeling the band diagram of
abrupt and graded P-CdTe/n-HgCdTe heterostructures. The analysis includes the effect of valence band offset and interface
charges on the surface potentials at abrupt hetero-interface, for typical doping levels of the n-type layers and the MOCVD
grown CdTe. In the case of graded heterojunctions, the effect of grading on the band diagram for various doping levels is
studied, while taking into consideration a generally accepted valence band offset. The MOCVD CdTe with additional pre and
post treatments and anneal form the basis of a photodiode with a new design. The new device architecture is based on a combination
of a p-on-n homojunction in a single layer of n-type HgCdTe and the CdTe/HgCdTe heterostructure for passivation. |
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Keywords: | Band bending CdTe HgCdTe metalorganic chemical vapor deposition (MOCVD) metal-insulator semiconductor (MIS) devices surface passivation |
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