The Design of a 2-V 900-MHz CMOS Bandpass Amplifier |
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Authors: | Yu Cheng Chung-Yu Wu Jeng Gong |
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Affiliation: | (1) Institute of Electronics and Department of Electronics Engineering, National Chiao-Tung University, Engineering Building 4th, 1001 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China;(2) Noise Measurement Lab., Electronical Electronics of National Tsing-Hua University, Taiwan |
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Abstract: | A 900 MHz low-power CMOS bandpassamplifier suitable for the applications of RFfront-end in wireless communication receiversis proposed and analyzed. In this design, thetemperature compensation circuit is used tostabilize the amplifier gain so that theoverall amplifier has a good temperaturestability. Moreover, the compact tunablepositive-feedback circuit is connected to theintegrated spiral inductor to generate thenegative resistance and enhance its
value. The simple diode varactor circuit isadopted for center-frequency tuning. These twoimproved circuits can reduce the powerdissipation of the amplifier. An experimentalchip fabricated by 0.5 mdouble-poly-double-metal CMOS technologyoccupies a chip area of
; chip area. The measuredresults have verified the performance of thefabricated CMOS bandpass amplifier. Under a2-V supply voltage, the measured quality factoris tunable between 4.5 and 50 and the tunablefrequency range is between 845 MHz and 915 MHz. At
, the measured
is 20 dB whereas thenoise figure is 5.2 dB in the passband. Thegain variation is less than 4 dB in the rangeof 0–80°C. The dc powerdissipation is 35 mW. Suitable amplifier gain,low power dissipation, and good temperaturestability make the proposed bandpass amplifierquite feasible in RF front-endapplications. |
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Keywords: | Tunable bandpass amplifier bandpass filter CMOS technology integrated inductor temperature stability low power dissipation mobile communication radio frequency RF front-end circuit wireless receiver |
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