| 镍、金掺杂n型硅材料的NTC和电学特性 |
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| 引用本文： | 董茂进,陈朝阳,范艳伟,王军华,陶明德,丛秀云. 镍、金掺杂n型硅材料的NTC和电学特性[J]. 半导体学报, 2009, 30(8): 083007-4 |
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| 作者姓名： | 董茂进 陈朝阳 范艳伟 王军华 陶明德 丛秀云 |
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| 作者单位： | Xinjiang;Technical;Institute;Physics;Chemistry;Chinese;Academy;Sciences;Graduate;University; |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient （NTC） characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 ℃, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.
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| 关 键 词： | 单晶硅材料 负温度系数 乙醇溶液 理论计算法 低电阻率 氯化镍 电阻值 NTC |
| 修稿时间： | 2009-03-17 |
NTC and electrical properties of nickel and gold doped n-type silicon material |
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| Dong Maojin,Chen Zhaoyang,Fan Yanwei,Wang Junhu,Tao Mingde and Cong Xiuyun. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Chinese Journal of Semiconductors, 2009, 30(8): 083007-4 |
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| Authors: | Dong Maojin Chen Zhaoyang Fan Yanwei Wang Junhu Tao Mingde Cong Xiuyun |
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| Affiliation: | Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China |
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| Abstract: | Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol s |
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| Keywords: | deep level impurities nickel gold NTC electrical properties |
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