Ultraviolet luminescence of thin GaN films grown by radical-beam gettering epitaxy on porous GaAs(111) substrates |
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| Authors: | V V Kidalov G A Sukach A S Revenko E P Potapenko |
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| Affiliation: | (1) Berdyansk State Pedagogical University, Berdyansk, 71100, Ukraine;(2) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 01237, Ukraine |
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| Abstract: | GaN films with a thickness of 0.1 µm were grown by radical-beam gettering epitaxy on porous GaAs(111) substrates. Excitonic luminescence bands are dominant in the photoluminescence spectra measured at 4.2 K. The energy positions of excitonic-band peaks are analyzed; as a result, it is concluded that there are stresses in the grown GaN films. |
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