| a—Si：H TFT电流—电压特性研究 |
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| 引用本文： | 万新恒,徐重阳. a—Si：H TFT电流—电压特性研究[J]. 光电子技术, 1996, 16(3): 193-200 |
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| 作者姓名： | 万新恒 徐重阳 |
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| 作者单位： | 华中理工大学固体电子学系!武汉430074 |
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| 摘 要： | 本文发展了一种研究ａ－Ｓｉ：Ｈ ＴＦＴ电流－电压特性的新方法。基于局域态电荷密度解析统一模型，提出并深入分析了沟道区有效温度参数的概念，并由此推导出了ａ－Ｓｉ：Ｈ ＴＦＴ电流－电压特性的解析表达式。其理论值与实验值符合很好。该模型可用于ａ－Ｓｉ：Ｈ ＴＦＴ静态特性分析及其电路优化。
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| 关 键 词： | 非晶硅 薄膜晶体管 电流－电压 特性 |
Development of the Current-Voltage Characteristics of a-Si:H TFTs |
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| Wan Xinheng, Xu Zhongyang ,Zou Xuecheng ,Zhang Shaoqiang, Yuan Qiyan ,Ding Hui. Development of the Current-Voltage Characteristics of a-Si:H TFTs[J]. Optoelectronic Technology, 1996, 16(3): 193-200 |
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| Authors: | Wan Xinheng Xu Zhongyang Zou Xuecheng Zhang Shaoqiang Yuan Qiyan Ding Hui |
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| Abstract: | A novel method describing current-voltage characteristics of a-Si: H TFTs is presented. Based on an advanced model for the density of localized trapped charge,an analytic drain current model for a-Si l H TFTs is then derived by introducing the effective temperature parameter. The experimental data agrees very well with theory value. The model has been developed to be incorporated into a circuit sumulator and used for CAE of a-Si: H TFT AMLCDs. |
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| Keywords: | a-Si:H TFT density of localized trapped charge effective temperature current-voltage characteristics |
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