Novel hydrogen annealing for forming SiO2 film by rapidthermal processing |
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| Authors: | Arakawa T Fukuda H Ohno S |
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| Affiliation: | OKI Electr. Inc. Co. Ltd., Tokyo; |
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| Abstract: | Hydrogen annealing at 700-1100°C for 0-300 s has been combined with SiO2 formation by rapid thermal processing (RTP). The SiO2 films formed with the above processes were evaluated by C-V and I-V measurements and by time-dependent dielectric breakdown (TDDB) tests. These films provide longer time to breakdown andless positive charge generation than SiO2 films formed without H2 annealing. In particular, the SiO2 formation-H2 annealing SiO 2 formation process is quite effective in improving the dielectric strength of the thin RTP-SiO2 film |
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