A planar InGaAs PIN/JFET fiber-optic detector |
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| Authors: | Ohnaka K Inoue K Uno T Hasegawa K Hase N Serizawa H |
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| Affiliation: | Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., Osaka, Japan; |
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| Abstract: | A planar structure monolithic optoelectronic integrated circuit (OEIC), comprising an InGaAs PIN photodiode and an InGaAs junction field effect transistor (JFET), has been developed. A cutoff frequency of 1.3 GHz has been successfully obtained. A low dark-current characteristic has also been obtained by polyimide passivation. Design principle, fabrication procedures, and operation characteristics of the PIN/JFET are described. |
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